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【澳门太阳2007网址】Characterization of Semiconductor Detectors Using IBIC Imaging Method

Source:Date:2018-12-07
Topic: Characterization of Semiconductor Detectors Using IBIC Imaging Method
Lecturer: Aneliya Karadzhinova-Ferrer, researcher of the Ru?er Boškovi? Institute
Host: Professor Li Zheng
Time: 14:30, December 7 (Friday), 2018
Venue: Room 319, XTU No.2 Teaching Building
 
Profile
Dr. Ferrer received his Ph.D. from the University of Helsinki in 2017. His main research interests are how to ensure the stability of particle detectors. He is currently a researcher at the Ruder Boskovic Institute and one of the young researchers of Professor Jaakko’s research group. He has cooperated with CERN CMS to publish nearly 90 physics articles. They are mainly on the performance stability of gas and semiconductor particle detectors, including reliability studies of various material characterization techniques (SEM microscope, white light interferometry, automated optical scanning system, chemistry and electrical characterization).
 
Abstract
The Ion Beam Induced Current (IBIC) technique available at the Accelerator laboratory of the Ruder Boskovic Institute is using scanning microbeam to study the properties of various semiconductor devices. The characteristics of the IBIC provide us with information of the response of the material and the coordinate of the beam impact point. The focused IBIC technique allows us to map 2D spatially resolved Charge Collection Efficiency (CCE) of different pad and pixelated detector structures with few micrometer resolution. Semiconductor devices, made of Si and CdTe, were characterized with 2 MeV proton microprobe with different bias settings to create a detailed charge collection studies. In this work we present results of IBIC scans, study the impact of anode material selection, and analyse the performance of the detectors.